onsemi Dual 2 Type N-Channel Power MOSFET, 42 A, 60 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 178-4314
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1500 units)*
PHP41,580.00
(exc. VAT)
PHP46,575.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,500 unit(s) shipping from January 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1500 - 3000 | PHP27.72 | PHP41,580.00 |
| 4500 + | PHP25.988 | PHP38,982.00 |
*price indicative
- RS Stock No.:
- 178-4314
- Mfr. Part No.:
- NTMFD5C674NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 37W | |
| Minimum Operating Temperature | 175°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Length | 5.1mm | |
| Width | 6.1 mm | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 37W | ||
Minimum Operating Temperature 175°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Length 5.1mm | ||
Width 6.1 mm | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low on resistance
High current capability
Small footprint (5x6 mm)
Benefits
Minimal conduction losses
Robust load performance
Compact Design
Applications
Motor Control
Synchronous DC to DC Regulator
Power Switches (High Side Driver,Low Side Driver, H-Bridges etc.)
Battery Management and Protection
End Products
Battery Packs
Power Supplies
Rotary Drones
Power Tools
Power Over Ethernet (PoE)
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