onsemi Dual 2 Type N-Channel Power MOSFET, 25 A, 80 V Enhancement, 8-Pin DFN
- RS Stock No.:
- 195-2560
- Mfr. Part No.:
- NVMFD6H852NLT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-2560
- Mfr. Part No.:
- NVMFD6H852NLT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.2W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free
Related links
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN NVMFD6H852NLT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN NVMFD6H852NLWFT1G
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Dual 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin DFN