onsemi Dual 2 Type N-Channel Power MOSFET, 70 A, 40 V Enhancement, 8-Pin DFN NVMFD5C462NT1G
- RS Stock No.:
- 178-4454
- Mfr. Part No.:
- NVMFD5C462NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP1,056.53
(exc. VAT)
PHP1,183.31
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,450 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP105.653 | PHP1,056.53 |
| 100 - 240 | PHP102.483 | PHP1,024.83 |
| 250 - 490 | PHP96.333 | PHP963.33 |
| 500 - 990 | PHP87.663 | PHP876.63 |
| 1000 + | PHP77.143 | PHP771.43 |
*price indicative
- RS Stock No.:
- 178-4454
- Mfr. Part No.:
- NVMFD5C462NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.86V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 175°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.86V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 175°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 5.1mm | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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