onsemi Dual 2 Type N-Channel Small Signal, 910 mA, 20 V Enhancement, 6-Pin SC-88 NTJD4401NT1G
- RS Stock No.:
- 184-1229
- Mfr. Part No.:
- NTJD4401NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
PHP1,166.20
(exc. VAT)
PHP1,306.10
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,500 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 400 | PHP11.662 | PHP1,166.20 |
| 500 - 900 | PHP10.338 | PHP1,033.80 |
| 1000 - 1400 | PHP9.269 | PHP926.90 |
| 1500 - 1900 | PHP8.412 | PHP841.20 |
| 2000 + | PHP7.704 | PHP770.40 |
*price indicative
- RS Stock No.:
- 184-1229
- Mfr. Part No.:
- NTJD4401NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 910mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 440mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 550mW | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.76V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Small Signal | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 910mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 440mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 550mW | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.76V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. The low figure of merit is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Small Footprint (2 x 2 mm)
Low Gate Charge N-Channel Device
ESD Protected Gate
Same Package as SC-70 (6 Leads)
Applications:
Load Power Switching
Li-Ion Battery Supplied Devices
DC-DC Conversion
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