DiodesZetex Isolated 2 Type N-Channel Small Signal, 200 mA, 50 V Enhancement, 6-Pin SC-88 BSS138DW-7-F
- RS Stock No.:
- 708-2481
- Mfr. Part No.:
- BSS138DW-7-F
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP330.75
(exc. VAT)
PHP370.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 153,050 unit(s) shipping from January 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP13.23 | PHP330.75 |
| 50 - 100 | PHP11.907 | PHP297.68 |
| 125 - 225 | PHP10.716 | PHP267.90 |
| 250 - 475 | PHP9.645 | PHP241.13 |
| 500 + | PHP8.68 | PHP217.00 |
*price indicative
- RS Stock No.:
- 708-2481
- Mfr. Part No.:
- BSS138DW-7-F
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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