Vishay Siliconix SiS110DN Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3
- RS Stock No.:
- 178-3962
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
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PHP1,166.25
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PHP1,306.25
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 75 | PHP46.65 | PHP1,166.25 |
| 100 - 475 | PHP45.251 | PHP1,131.28 |
| 500 - 975 | PHP43.893 | PHP1,097.33 |
| 1000 + | PHP42.576 | PHP1,064.40 |
*price indicative
- RS Stock No.:
- 178-3962
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiS110DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Power Dissipation Pd | 24W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Standards/Approvals | RoHS | |
| Width | 3.15mm | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiS110DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Power Dissipation Pd 24W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Standards/Approvals RoHS | ||
Width 3.15mm | ||
Height 1.07mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay SiS110DN Series MOSFET, 100V Drain Source Voltage, 14.2A Continuous Drain Current - SiS110DN-T1-GE3
This MOSFET is a surface-mount N-channel transistor designed for switching and power management in compact electronic assemblies. It operates across a wide ambient range and is intended for applications requiring a balance of voltage handling, current capability and moderate gate charge for efficient control.
Features and Benefits:
• 100V drain tolerance enables high-voltage switching capability
• 70 mΩ low RDS(on) reduces conduction losses
• 14.2A continuous drain current supports substantial load currents
• 24W power dissipation allows sustained power handling
• 8.5 nC typical gate charge facilitates responsive gate driving
• ±20V gate-source rating offers robust gate-voltage margin
• 70 mΩ low RDS(on) reduces conduction losses
• 14.2A continuous drain current supports substantial load currents
• 24W power dissipation allows sustained power handling
• 8.5 nC typical gate charge facilitates responsive gate driving
• ±20V gate-source rating offers robust gate-voltage margin
Applications
• Suitable for DC-DC converter switching stages
• Ideal for motor-drive low-side switching
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution
• Ideal for motor-drive low-side switching
• Used with synchronous rectification in power supplies
• Can be used for load switching in telecoms equipment
• Appropriate for battery management and power distribution
What thermal range can I expect for reliable operation?
The device is specified to function from -55 °C up to 150 °C, allowing use in environments with large temperature variation.
How does the package support PCB assembly and cooling?
It is supplied in a compact PowerPAK1212 package for low-profile surface-mount placement and reasonable thermal transfer to the PCB.
What gate-drive considerations apply given the gate charge?
With a typical gate charge of 8.5 nC, gate drivers should source and sink sufficient current to switch at the desired speed without excessive drive losses.
Are there any regulatory restrictions noted for this component?
The component conforms to RoHS requirements for restricted substances in electronic assemblies.
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