N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS Stock No.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

Price Each (On a Reel of 3000)

PHP16.78

(exc. VAT)

PHP18.79

(inc. VAT)

2 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Reel**
3000 +	PHP16.78	PHP50,340.00

**price indicative

RS Stock No.:: 178-3693
Mfr. Part No.:: SiS110DN-T1-GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	14.2 A
Maximum Drain Source Voltage	100 V
Series	TrenchFET
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	70 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	4V
Maximum Power Dissipation	24 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	3.15mm
Length	3.15mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	8.5 nC @ 10 V
Forward Diode Voltage	1.2V
Height	1.07mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

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