Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.2 A, 100 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 178-3693
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
PHP82,026.00
(exc. VAT)
PHP91,869.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP27.342 | PHP82,026.00 |
*price indicative
- RS Stock No.:
- 178-3693
- Mfr. Part No.:
- SiS110DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Power Dissipation Pd | 24W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.15 mm | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Power Dissipation Pd 24W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.15 mm | ||
Length 3.15mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS - Qoss FOM
Related links
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3