Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

PHP895.72

(exc. VAT)

PHP1,003.205

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,820 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 45PHP179.144PHP895.72
50 - 95PHP164.514PHP822.57
100 - 495PHP147.908PHP739.54
500 - 995PHP133.676PHP668.38
1000 +PHP119.366PHP596.83

*price indicative

Packaging Options:
RS Stock No.:
178-3934
Mfr. Part No.:
SiDR392DP-T1-GE3
Manufacturer:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

900μΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

6 V

Typical Gate Charge Qg @ Vgs

125nC

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.07mm

Length

5.99mm

Width

5 mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
TW
TrenchFET® Gen IV power MOSFET

Top side cooling feature provides additional venue for thermal transfer

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

Related links