Vishay Siliconix TrenchFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3

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Subtotal (1 pack of 10 units)*

PHP442.96

(exc. VAT)

PHP496.12

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP44.296PHP442.96
50 - 90PHP42.50PHP425.00
100 - 490PHP35.768PHP357.68
500 - 990PHP29.149PHP291.49
1000 +PHP27.667PHP276.67

*price indicative

Packaging Options:
RS Stock No.:
178-3901
Mfr. Part No.:
SiA106DJ-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SC-70-6L

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.0185Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.9nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

19W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1mm

Length

2.2mm

Width

1.35 mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg Figure-of-Merit (FOM)

Tuned for the lowest RDS – Qoss

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