Vishay TrenchFET N-Channel MOSFET, 9 A, 60 V Enhancement, 6-Pin PowerPAK SIA4620DJ-T1-GE3
- RS Stock No.:
- 904-973
- Mfr. Part No.:
- SIA4620DJ-T1-GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
PHP28.58
(exc. VAT)
PHP32.01
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from February 16, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | PHP28.58 |
| 25 - 99 | PHP18.44 |
| 100 + | PHP11.06 |
*price indicative
- RS Stock No.:
- 904-973
- Mfr. Part No.:
- SIA4620DJ-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 17.9W | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05mm | |
| Standards/Approvals | ROHS | |
| Length | 2.05mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 17.9W | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 2.05mm | ||
Standards/Approvals ROHS | ||
Length 2.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It excels in various applications due to its high performance metrics and Compact packaging, making it Ideal for modern electronic designs.
Operates at a maximum drain-source voltage of 60 V
Features low on-state resistance for enhanced efficiency
Offers a continuous drain current up to 8.6 A at 25 °C
Includes extensive testing for reliability and performance
Related links
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 6-Pin PowerPAK SC-70W-6L SQA468CEJW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SI7120BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212-8 SiS890ADN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS176LDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3