Vishay Siliconix TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal 50 units (supplied on a continuous strip)*

PHP8,225.70

(exc. VAT)

PHP9,212.80

(inc. VAT)

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Units
Per Unit
50 - 95PHP164.514
100 - 495PHP147.908
500 - 995PHP133.676
1000 +PHP119.366

*price indicative

Packaging Options:
RS Stock No.:
178-3934P
Mfr. Part No.:
SiDR392DP-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

900μΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

125nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

6 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

5.99mm

Height

1.07mm

Standards/Approvals

No

Width

5 mm

Automotive Standard

No

RoHS Status: Exempt

TrenchFET® Gen IV power MOSFET

Top side cooling feature provides additional venue for thermal transfer

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

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