onsemi Single SiC Power Module, 28 A, 3-Pin TO-220
- RS Stock No.:
- 172-8780
- Mfr. Part No.:
- FFSP3065A
- Manufacturer:
- onsemi
This image is representative of the product range
Subtotal (1 tube of 800 units)*
PHP239,724.80
(exc. VAT)
PHP268,492.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Tube* |
|---|---|---|
| 800 + | PHP299.656 | PHP239,724.80 |
*price indicative
- RS Stock No.:
- 172-8780
- Mfr. Part No.:
- FFSP3065A
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 28A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Height | 16.51mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 28A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 175°C | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Height 16.51mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.
Features and Benefits
• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
Applications
• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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