onsemi SiC Power Module, 1200 V F1-2PACK

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Bulk discount available

Subtotal (1 tray of 28 units)*

PHP257,982.956

(exc. VAT)

PHP288,940.904

(inc. VAT)

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  • 28 unit(s) ready to ship from another location
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Units
Per Unit
Per Tray*
28 - 28PHP9,213.677PHP257,982.96
56 - 56PHP8,937.274PHP250,243.67
84 +PHP8,669.169PHP242,736.73

*price indicative

RS Stock No.:
248-5823
Mfr. Part No.:
NXH010P120MNF1PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Maximum Drain Source Voltage Vds

1200V

Package Type

F1-2PACK

Mount Type

Through Hole

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material


The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

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