onsemi SiC Power Type N-Channel MOSFET, 145 A, 650 V N, 7-Pin TO-263
- RS Stock No.:
- 229-6441
- Mfr. Part No.:
- NTBG015N065SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
PHP1,166,905.60
(exc. VAT)
PHP1,306,934.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 18, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 1600 | PHP1,458.632 | PHP1,166,905.60 |
| 2400 - 3200 | PHP1,434.719 | PHP1,147,775.20 |
| 4000 + | PHP1,411.579 | PHP1,129,263.20 |
*price indicative
- RS Stock No.:
- 229-6441
- Mfr. Part No.:
- NTBG015N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SiC Power | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SiC Power | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Related links
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