onsemi SiC Power Type N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247
- RS Stock No.:
- 229-6459
- Mfr. Part No.:
- NTH4L045N065SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 450 units)*
PHP359,150.40
(exc. VAT)
PHP402,248.25
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from April 27, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 450 - 900 | PHP798.112 | PHP359,150.40 |
| 1350 - 1800 | PHP770.108 | PHP346,548.60 |
| 2250 + | PHP734.263 | PHP330,418.35 |
*price indicative
- RS Stock No.:
- 229-6459
- Mfr. Part No.:
- NTH4L045N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.4V | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.4V | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Related links
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