onsemi SiC Power Type N-Channel MOSFET, 142 A, 650 V N, 4-Pin TO-247
- RS Stock No.:
- 229-6457
- Mfr. Part No.:
- NTH4L015N065SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 450 units)*
PHP622,072.35
(exc. VAT)
PHP696,721.05
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 450 - 900 | PHP1,382.383 | PHP622,072.35 |
| 1350 - 1800 | PHP1,359.722 | PHP611,874.90 |
| 2250 + | PHP1,337.79 | PHP602,005.50 |
*price indicative
- RS Stock No.:
- 229-6457
- Mfr. Part No.:
- NTH4L015N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 283nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 283nC | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
Related links
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L015N065SC1
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L060N090SC1
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 7-Pin TO-263
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 7-Pin TO-263 NTBG045N065SC1