onsemi Isolated Type N-Channel SiC Power Module, 304 A, 1200 V, 36-Pin F2
- RS Stock No.:
- 229-6509
- Mfr. Part No.:
- NXH006P120MNF2PTG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 60 units)*
PHP870,367.20
(exc. VAT)
PHP974,811.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 04, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 60 - 120 | PHP14,506.12 | PHP870,367.20 |
| 180 - 240 | PHP14,268.308 | PHP856,098.48 |
| 300 + | PHP14,038.181 | PHP842,290.86 |
*price indicative
- RS Stock No.:
- 229-6509
- Mfr. Part No.:
- NXH006P120MNF2PTG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 304A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | F2 | |
| Mount Type | Chassis | |
| Pin Count | 36 | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 950W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 847nC | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Isolated | |
| Width | 57 mm | |
| Length | 63.3mm | |
| Height | 17mm | |
| Standards/Approvals | Halide Free, Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 304A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type F2 | ||
Mount Type Chassis | ||
Pin Count 36 | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 950W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 847nC | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Isolated | ||
Width 57 mm | ||
Length 63.3mm | ||
Height 17mm | ||
Standards/Approvals Halide Free, Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor power module containing an 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. It is typically used in solar inverter, UPS, electrical vehicle charging stations and industrial power.
Options with pre−applied thermal interface material
Options with solderable pins and press−fit pins
Pb−free
RoHS compliant
Related links
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