Littelfuse Type N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-263 IXFA36N60X3
- RS Stock No.:
- 245-6996
- Mfr. Part No.:
- IXFA36N60X3
- Manufacturer:
- Littelfuse
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Subtotal (1 unit)*
PHP367.30
(exc. VAT)
PHP411.38
(inc. VAT)
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In Stock
- 300 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP367.30 |
| 10 - 24 | PHP331.55 |
| 25 - 49 | PHP325.24 |
| 50 - 99 | PHP314.72 |
| 100 + | PHP274.06 |
*price indicative
- RS Stock No.:
- 245-6996
- Mfr. Part No.:
- IXFA36N60X3
- Manufacturer:
- Littelfuse
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 446W | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Littelfuse | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 446W | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO263 package. These Power MOSFETs feature significantly reduced channel resistance RDSon and gate charge Qg. They feature the lowest figures of merit RDS Qg and RthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFETseries of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
Related links
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