STMicroelectronics SCT10N120H SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 SCT10N120H

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RS Stock No.:
204-3949
Mfr. Part No.:
SCT10N120H
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Series

SCT10N120H

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.52 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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