STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module, 75 A, 1200 V Enhancement, 8-Pin ACEPACK 2
- RS Stock No.:
- 249-6719
- Mfr. Part No.:
- A2U12M12W2-F2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 18 units)*
PHP327,496.716
(exc. VAT)
PHP366,796.314
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from December 28, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tray* |
|---|---|---|
| 18 - 18 | PHP18,194.262 | PHP327,496.72 |
| 36 - 36 | PHP17,648.378 | PHP317,670.80 |
| 54 + | PHP17,118.967 | PHP308,141.41 |
*price indicative
- RS Stock No.:
- 249-6719
- Mfr. Part No.:
- A2U12M12W2-F2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK 2 | |
| Series | A2U | |
| Mount Type | Chassis | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 2.9V | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Typical Gate Charge Qg @ Vgs | 298nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | 3 Phase | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK 2 | ||
Series A2U | ||
Mount Type Chassis | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 2.9V | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Typical Gate Charge Qg @ Vgs 298nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration 3 Phase | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
An NTC sensor completes the design
Related links
- STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module 1200 V Enhancement, 8-Pin ACEPACK 2 A2U12M12W2-F2
- STMicroelectronics A2F SiC Power Module 1200 V Enhancement ACEPACK 2
- STMicroelectronics A2F SiC Power Module 1200 V Enhancement ACEPACK 2 A2F12M12W2-F1
- STMicroelectronics A2TBH45M65W3-FC 5 MOSFET Module 650 V, 30-Pin ACEPACK 2 A2TBH45M65W3-FC
- STMicroelectronics A2F20M65W3-FC Quad MOSFET Module 650 V, 30-Pin ACEPACK 2 A2F20M65W3-FC
- STMicroelectronics SCT30N120H SiC N-Channel SiC Power Module 1200 V, 3-Pin HiP247 SCT30N120H
- onsemi Isolated Type N-Channel SiC Power Module 1200 V, 36-Pin F2 NXH006P120MNF2PTG
- onsemi Isolated Type N-Channel SiC Power Module 1200 V, 36-Pin F2