ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007

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Subtotal (1 unit)*

PHP48,847.29

(exc. VAT)

PHP54,708.96

(inc. VAT)

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Per Unit
1 - 3PHP48,847.29
4 - 7PHP48,403.21
8 +PHP47,780.20

*price indicative

RS Stock No.:
144-2259
Mfr. Part No.:
BSM180D12P3C007
Manufacturer:
ROHM
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Brand

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Series

BSM

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

122mm

Width

45.6 mm

Height

17mm

Number of Elements per Chip

2

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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