ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001
- RS Stock No.:
- 144-2260
- Mfr. Part No.:
- BSM300D12P2E001
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP80,086.28
(exc. VAT)
PHP89,696.63
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 1 | PHP80,086.28 |
| 2 + | PHP78,084.11 |
*price indicative
- RS Stock No.:
- 144-2260
- Mfr. Part No.:
- BSM300D12P2E001
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | BSM | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 1875W | |
| Maximum Operating Temperature | 150°C | |
| Length | 152mm | |
| Width | 57.95 mm | |
| Height | 17mm | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series BSM | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 1875W | ||
Maximum Operating Temperature 150°C | ||
Length 152mm | ||
Width 57.95 mm | ||
Height 17mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Related links
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