ROHM Half Bridge BSM Type N-Channel SiC Power Module, 240 A, 1200 V Enhancement, 4-Pin BSM120D12P2C005
- RS Stock No.:
- 144-2257
- Mfr. Part No.:
- BSM120D12P2C005
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 unit)*
PHP31,856.07
(exc. VAT)
PHP35,678.80
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 3 | PHP31,856.07 |
| 4 - 7 | PHP31,059.67 |
| 8 + | PHP30,283.18 |
*price indicative
- RS Stock No.:
- 144-2257
- Mfr. Part No.:
- BSM120D12P2C005
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | BSM | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 122mm | |
| Height | 17mm | |
| Width | 45.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series BSM | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 122mm | ||
Height 17mm | ||
Width 45.6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Related links
- ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- ROHM BSM 2 Type N-Channel SiC Power Module 1200 V Enhancement, 4-Pin BSM300D12P2E001
- ROHM BSM Dual SiC N-Channel SiC Power Module 1200 V, 4-Pin C BSM300D12P2E001
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-263
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-268
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-263 IXFA36N60X3
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-268 IXFT60N60X3HV
- Littelfuse Type N-Channel SiC Power Module 12 V Enhancement, 3-Pin TO-220 IXFP36N60X3