IXYS X2-Class Type N-Channel MOSFET, 76 A, 650 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

PHP20,099.61

(exc. VAT)

PHP22,511.56

(inc. VAT)

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10 +PHP2,009.961PHP20,099.61

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RS Stock No.:
168-4820
Mfr. Part No.:
IXTN102N65X2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

76A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-227

Series

X2-Class

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

152nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

595W

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.42 mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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