IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- RS Stock No.:
- 917-1463
- Mfr. Part No.:
- IXTH34N65X2
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP839.72
(exc. VAT)
PHP940.48
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 336 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP419.86 | PHP839.72 |
| 10 - 28 | PHP407.26 | PHP814.52 |
| 30 - 88 | PHP390.97 | PHP781.94 |
| 90 - 178 | PHP371.415 | PHP742.83 |
| 180 + | PHP349.13 | PHP698.26 |
*price indicative
- RS Stock No.:
- 917-1463
- Mfr. Part No.:
- IXTH34N65X2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 96mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 540W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.45 mm | |
| Standards/Approvals | No | |
| Length | 16.24mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-490 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 96mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 540W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 21.45 mm | ||
Standards/Approvals No | ||
Length 16.24mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-490 | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH62N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH80N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IXTH48N65X2
- IXYS X2-Class Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-264P