IXYS Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

PHP9,638.70

(exc. VAT)

PHP10,795.20

(inc. VAT)

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30 +PHP321.29PHP9,638.70

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RS Stock No.:
146-1788
Mfr. Part No.:
IXFH34N65X2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

540W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

5.3mm

Length

16.24mm

Width

21.45 mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiPerFET™ X2 Series


The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Fast intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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