N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK IXYS IXFA22N65X2
- RS Stock No.:
- 168-4819
- Mfr. Part No.:
- IXFA22N65X2
- Manufacturer:
- IXYS
Subtotal (1 tube of 50 units)**
PHP11,357.25
(exc. VAT)
PHP12,720.10
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Tube** |
---|---|---|
50 + | PHP227.145 | PHP11,357.25 |
**price indicative
- RS Stock No.:
- 168-4819
- Mfr. Part No.:
- IXFA22N65X2
- Manufacturer:
- IXYS
Select all | Attribute | Value |
---|---|---|
Manufacturer | IXYS | |
Channel Type | N | |
Maximum Continuous Drain Current | 22 A | |
Maximum Drain Source Voltage | 650 V | |
Series | HiperFET, X2-Class | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 145 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 2.7V | |
Maximum Power Dissipation | 390 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Length | 10.41mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
Width | 11.05mm | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.4V | |
Select all | ||
---|---|---|
Manufacturer IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 650 V | ||
Series HiperFET, X2-Class | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 145 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 390 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.41mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Width 11.05mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
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