IXYS X2-Class Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP7,196.60

(exc. VAT)

PHP8,060.20

(inc. VAT)

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Per Tube*
50 +PHP143.932PHP7,196.60

*price indicative

RS Stock No.:
146-1778
Mfr. Part No.:
IXTP4N65X2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

850mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

8.3nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

80W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.3mm

Width

15.9 mm

Height

4.7mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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