IXYS X2-Class Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-220 IXTP8N65X2M

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PHP827.64

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PHP926.955

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Packaging Options:
RS Stock No.:
917-1491
Mfr. Part No.:
IXTP8N65X2M
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

550mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

32W

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

16.07 mm

Height

4.9mm

Length

10.36mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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