IXYS X2-Class Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin ISOPLUS247

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Subtotal (1 tube of 30 units)*

PHP28,024.08

(exc. VAT)

PHP31,386.96

(inc. VAT)

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Units
Per Unit
Per Tube*
30 +PHP934.136PHP28,024.08

*price indicative

RS Stock No.:
168-4814
Mfr. Part No.:
IXTR102N65X2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

ISOPLUS247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

330W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

152nC

Maximum Operating Temperature

150°C

Length

16.13mm

Standards/Approvals

No

Width

21.34 mm

Height

5.21mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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