Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252

RS Stock No.:: 165-6872
Mfr. Part No.:: IPD042P03L3GATMA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

PHP131,562.50

(exc. VAT)

PHP147,350.00

(inc. VAT)

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Units	Per Unit	Per Reel*
2500 +	PHP52.625	PHP131,562.50

*price indicative

RS Stock No.:: 165-6872
Mfr. Part No.:: IPD042P03L3GATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TO-252
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	131nC
	Maximum Power Dissipation Pd	150W
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 30V
	Package Type TO-252
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 131nC
	Maximum Power Dissipation Pd 150W
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 2.41mm
	Length 6.73mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPD042P03L3GATMA1

This MOSFET is a P-channel enhancement-mode power transistor designed for surface-mount applications where high current handling and a robust thermal operating range are required. It functions as a high-performance switching device in power-conversion and load-control circuits, providing low conduction loss and controlled gate-drive behaviour for demanding electronic systems.

Features and Benefits:

• 6.8 mΩ RDS(on) minimises conduction losses for improved efficiency
• 70A continuous drain current supports heavy load switching
• 150W power dissipation enables sustained thermal handling
• 131 nC typical gate charge allows predictable switching behaviour
• -55 °C to 175 °C operating range permits high-temperature deployments
• VGS ±20V rating ensures gate-drive voltage flexibility

Applications

• Suitable for synchronous rectification in DC-DC converters
• Ideal for high-current load switching in power supplies
• Used with motor drivers requiring low conduction resistance
• Can be used for battery management and protection circuits
• Appropriate for high-density surface-mount power modules

What package type should I anticipate for PCB layout considerations?

The device is supplied in a TO-252 surface-mount package with three pins, enabling compact board placement and thermal-pad routing.

How does the device handle gate-drive voltages during operation?

The maximum gate-source voltage is ±20V, so gate drivers should be specified within this limit to avoid overstress.

What is the maximum voltage this transistor can block?

It is rated for a maximum drain-source voltage of 30V, defining its suitability for low-voltage power systems.

Are there any limitations on forward voltage during conduction?

The typical forward voltage is -1.1V, which affects conduction-loss calculations in circuit design.