Infineon OptiMOS P Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1
- RS Stock No.:
- 892-2377
- Mfr. Part No.:
- BSS314PEH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
PHP910.80
(exc. VAT)
PHP1,020.10
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 100 | PHP9.108 | PHP910.80 |
| 200 - 400 | PHP8.292 | PHP829.20 |
| 500 - 900 | PHP7.089 | PHP708.90 |
| 1000 - 1900 | PHP6.373 | PHP637.30 |
| 2000 + | PHP6.065 | PHP606.50 |
*price indicative
- RS Stock No.:
- 892-2377
- Mfr. Part No.:
- BSS314PEH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS314PEH6327XTSA1
This p-channel MOSFET serves as a compact surface-mount switching device for low-voltage power control in automotive and industrial electronics. Designed for enhancement-mode operation, it offers controlled conduction for power-path and load-switching tasks across a wide temperature range, making it suitable for demanding thermal environments.
Features and Benefits:
• 30V drain capability enables low-voltage system switching
• 230mΩ Rds(on) delivers efficient conduction for small loads
• 1.5A continuous drain current supports moderate current paths
• 2.9nC typical gate charge reduces switching energy losses
• 20V maximum gate-source rating allows flexible gate drive margins
• Automotive AEC‑Q101 qualification suits vehicle‑grade applications
• 230mΩ Rds(on) delivers efficient conduction for small loads
• 1.5A continuous drain current supports moderate current paths
• 2.9nC typical gate charge reduces switching energy losses
• 20V maximum gate-source rating allows flexible gate drive margins
• Automotive AEC‑Q101 qualification suits vehicle‑grade applications
Applications
• Suitable for battery management and protection circuits
• Ideal for load switching in automotive control modules
• Used with power rails in handheld and portable electronics
• Can be used for small-signal power switching in sensor nodes
• Suitable for surface-mount designs where board space is limited
• Ideal for load switching in automotive control modules
• Used with power rails in handheld and portable electronics
• Can be used for small-signal power switching in sensor nodes
• Suitable for surface-mount designs where board space is limited
What thermal extremes can it tolerate during operation?
It is specified to operate from -55°C up to 150°C, allowing use in environments with wide temperature variation.
How does the package influence board-level integration?
The SOT-23 surface-mount format permits compact placement and automated assembly on densely populated boards.
What power-handling constraints should designers consider?
The device dissipates up to 500mW, so adequate PCB copper and thermal layout are required to manage junction temperature under continuous load.
Which electrical limit governs gate drive selection?
Drive voltages must remain within ±20V relative to the source to avoid gate overstress and ensure reliable switching.
Related links
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS215PH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252