Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1
- RS Stock No.:
- 825-9051
- Mfr. Part No.:
- IPD042P03L3GATMA1
- Manufacturer:
- Infineon
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PHP1,026.40
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 240 | PHP91.64 | PHP916.40 |
| 250 - 740 | PHP72.991 | PHP729.91 |
| 750 - 1190 | PHP58.50 | PHP585.00 |
| 1200 - 2490 | PHP54.42 | PHP544.20 |
| 2500 + | PHP52.825 | PHP528.25 |
*price indicative
- RS Stock No.:
- 825-9051
- Mfr. Part No.:
- IPD042P03L3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 131nC | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 131nC | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPD042P03L3GATMA1
This MOSFET is a P-channel enhancement-mode power transistor designed for surface-mount applications where high current handling and a robust thermal operating range are required. It functions as a high-performance switching device in power-conversion and load-control circuits, providing low conduction loss and controlled gate-drive behaviour for demanding electronic systems.
Features and Benefits:
• 6.8 mΩ RDS(on) minimises conduction losses for improved efficiency
• 70A continuous drain current supports heavy load switching
• 150W power dissipation enables sustained thermal handling
• 131 nC typical gate charge allows predictable switching behaviour
• -55 °C to 175 °C operating range permits high-temperature deployments
• VGS ±20V rating ensures gate-drive voltage flexibility
• 70A continuous drain current supports heavy load switching
• 150W power dissipation enables sustained thermal handling
• 131 nC typical gate charge allows predictable switching behaviour
• -55 °C to 175 °C operating range permits high-temperature deployments
• VGS ±20V rating ensures gate-drive voltage flexibility
Applications
• Suitable for synchronous rectification in DC-DC converters
• Ideal for high-current load switching in power supplies
• Used with motor drivers requiring low conduction resistance
• Can be used for battery management and protection circuits
• Appropriate for high-density surface-mount power modules
• Ideal for high-current load switching in power supplies
• Used with motor drivers requiring low conduction resistance
• Can be used for battery management and protection circuits
• Appropriate for high-density surface-mount power modules
What package type should I anticipate for PCB layout considerations?
The device is supplied in a TO-252 surface-mount package with three pins, enabling compact board placement and thermal-pad routing.
How does the device handle gate-drive voltages during operation?
The maximum gate-source voltage is ±20V, so gate drivers should be specified within this limit to avoid overstress.
What is the maximum voltage this transistor can block?
It is rated for a maximum drain-source voltage of 30V, defining its suitability for low-voltage power systems.
Are there any limitations on forward voltage during conduction?
The typical forward voltage is -1.1V, which affects conduction-loss calculations in circuit design.
Related links
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