P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 onsemi NTS4101PT1G
- RS Stock No.:
- 163-1141
- Mfr. Part No.:
- NTS4101PT1G
- Manufacturer:
- onsemi
Subtotal (1 reel of 3000 units)**
PHP12,768.00
(exc. VAT)
PHP14,301.00
(inc. VAT)
3000 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Reel** |
|---|---|---|
| 3000 + | PHP4.256 | PHP12,768.00 |
**price indicative
- RS Stock No.:
- 163-1141
- Mfr. Part No.:
- NTS4101PT1G
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.37 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-323 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 329 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 6.4 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.9mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.37 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-323 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 329 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.35mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 6.4 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.9mm | ||
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