onsemi Type P-Channel MOSFET, 1.3 A, 30 V Enhancement, 3-Pin SC-70 NTS4173PT1G
- RS Stock No.:
- 780-4761
- Mfr. Part No.:
- NTS4173PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
PHP398.475
(exc. VAT)
PHP446.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tape* |
|---|---|---|
| 25 - 25 | PHP15.939 | PHP398.48 |
| 50 - 100 | PHP15.702 | PHP392.55 |
| 125 - 225 | PHP14.162 | PHP354.05 |
| 250 - 475 | PHP14.044 | PHP351.10 |
| 500 + | PHP14.014 | PHP350.35 |
*price indicative
- RS Stock No.:
- 780-4761
- Mfr. Part No.:
- NTS4173PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 10.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 10.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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