Nexperia BUK964R4-40B Type N-Channel TrenchMOS logic level FET, 75 A, 40 V Enhancement, 3-Pin TO-263 BUK964R4-40B,118
- RS Stock No.:
- 151-3405
- Mfr. Part No.:
- BUK964R4-40B,118
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP1,256.28
(exc. VAT)
PHP1,407.035
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 2,300 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 10 | PHP251.256 | PHP1,256.28 |
| 15 - 45 | PHP225.914 | PHP1,129.57 |
| 50 - 245 | PHP206.506 | PHP1,032.53 |
| 250 - 745 | PHP190.184 | PHP950.92 |
| 750 + | PHP176.976 | PHP884.88 |
*price indicative
- RS Stock No.:
- 151-3405
- Mfr. Part No.:
- BUK964R4-40B,118
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | TrenchMOS logic level FET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | BUK964R4-40B | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 254W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.3mm | |
| Height | 4.5mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type TrenchMOS logic level FET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series BUK964R4-40B | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 254W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.3mm | ||
Height 4.5mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
N-channel TrenchMOS logic level FET, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
Related links
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- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263