Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

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Subtotal (1 pack of 2 units)*

PHP181.21

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PHP202.956

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP90.605PHP181.21
10 - 98PHP87.89PHP175.78
100 - 248PHP82.615PHP165.23
250 - 498PHP75.185PHP150.37
500 +PHP66.165PHP132.33

*price indicative

Packaging Options:
RS Stock No.:
258-3881
Mfr. Part No.:
IPG20N06S4L11ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Dual N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

OptiMOSTM-T2

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

65W

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

AEC Q101

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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