Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

PHP164.74

(exc. VAT)

PHP184.50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4,996 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8PHP82.37PHP164.74
10 - 98PHP79.90PHP159.80
100 - 248PHP75.105PHP150.21
250 - 498PHP68.35PHP136.70
500 +PHP60.15PHP120.30

*price indicative

Packaging Options:
RS Stock No.:
258-3881
Mfr. Part No.:
IPG20N06S4L11ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Package Type

TDSON

Series

OptiMOSTM-T2

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

65W

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Maximum Operating Temperature

175°C

Standards/Approvals

AEC Q101

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is dual super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Same thermal and electrical performance as a DPAK with the same die size.

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested


Related links