Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin
- RS Stock No.:
- 214-9062
- Mfr. Part No.:
- IPG20N06S4L11AATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 10 units)*
PHP801.44
(exc. VAT)
PHP897.61
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- 14,760 unit(s) ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP80.144 | PHP801.44 |
| 20 - 90 | PHP73.424 | PHP734.24 |
| 100 - 240 | PHP67.84 | PHP678.40 |
| 250 - 490 | PHP62.979 | PHP629.79 |
| 500 + | PHP61.219 | PHP612.19 |
*price indicative
- RS Stock No.:
- 214-9062
- Mfr. Part No.:
- IPG20N06S4L11AATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Height | 1mm | |
| Standards/Approvals | RoHS, MSL1, AEC Q101 | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Height 1mm | ||
Standards/Approvals RoHS, MSL1, AEC Q101 | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Related links
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