N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Nexperia PSMN1R7-60BS,118
- RS Stock No.:
- 798-2921
- Mfr. Part No.:
- PSMN1R7-60BS,118
- Manufacturer:
- Nexperia
Bulk discount available
Subtotal (1 pack of 2 units)**
PHP416.07
(exc. VAT)
PHP466.00
(inc. VAT)
Temporarily out of stock - back order for despatch 19/06/2025, delivery within 10 working days from desptach date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
---|---|---|
2 - 8 | PHP208.035 | PHP416.07 |
10 - 38 | PHP201.79 | PHP403.58 |
40 - 98 | PHP195.735 | PHP391.47 |
100 - 198 | PHP189.86 | PHP379.72 |
200 + | PHP184.17 | PHP368.34 |
**price indicative
- RS Stock No.:
- 798-2921
- Mfr. Part No.:
- PSMN1R7-60BS,118
- Manufacturer:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Nexperia | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.1 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 306 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Width | 11mm | |
Typical Gate Charge @ Vgs | 137 nC @ 10 V | |
Length | 10.3mm | |
Transistor Material | Si | |
Height | 4.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 306 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 11mm | ||
Typical Gate Charge @ Vgs 137 nC @ 10 V | ||
Length 10.3mm | ||
Transistor Material Si | ||
Height 4.5mm | ||
Minimum Operating Temperature -55 °C | ||
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