Nexperia Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-263 PSMN4R6-60BS,118
- RS Stock No.:
- 798-2987
- Mfr. Part No.:
- PSMN4R6-60BS,118
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
PHP545.66
(exc. VAT)
PHP611.14
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 468 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 4 - 36 | PHP136.415 | PHP545.66 |
| 40 - 76 | PHP133.068 | PHP532.27 |
| 80 - 196 | PHP129.473 | PHP517.89 |
| 200 - 996 | PHP126.048 | PHP504.19 |
| 1000 + | PHP124.82 | PHP499.28 |
*price indicative
- RS Stock No.:
- 798-2987
- Mfr. Part No.:
- PSMN4R6-60BS,118
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 211W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 70.8nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Width | 11 mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 211W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 70.8nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Width 11 mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Nexperia Type N-Channel MOSFET 60 V Enhancement118
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Nexperia Type N-Channel MOSFET 30 V Enhancement118
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-263
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement115