Nexperia Type N-Channel MOSFET, 100 A, 60 V Enhancement, 4-Pin SOT-669 PSMN5R5-60YS,115
- RS Stock No.:
- 798-2996
- Mfr. Part No.:
- PSMN5R5-60YS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP507.30
(exc. VAT)
PHP568.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,500 unit(s) shipping from May 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP101.46 | PHP507.30 |
| 25 - 95 | PHP98.422 | PHP492.11 |
| 100 - 245 | PHP95.47 | PHP477.35 |
| 250 - 495 | PHP92.608 | PHP463.04 |
| 500 + | PHP89.832 | PHP449.16 |
*price indicative
- RS Stock No.:
- 798-2996
- Mfr. Part No.:
- PSMN5R5-60YS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669
