Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89
- RS Stock No.:
- 145-8766
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 1000 units)*
PHP13,030.00
(exc. VAT)
PHP14,590.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Shipping from February 15, 2027
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 + | PHP13.03 | PHP13,030.00 |
*price indicative
- RS Stock No.:
- 145-8766
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-89 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-89 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS 3 Series MOSFET, 60V Maximum Drain Source Voltage, 3.2A Maximum Continuous Drain Current - BSS606NH6327XTSA1
Features and Benefits:
• 90mΩ low RDS(on) reduces conduction losses in power paths
• 3.2A continuous drain current supports moderate load driving
• 1.1V forward voltage minimises voltage drop in diode conduction
• 3.7nC typical gate charge enables efficient switching control
• 20V gate tolerance permits flexible gate-drive voltages
Applications
• Ideal for DC/DC converter switch stages
• Used in motor-control gate driver interfaces
• Can be used for load switching in telematics modules
• Appropriate for power distribution in embedded systems
What package dimensions and form factor does it use?
How does it cope with extreme thermal environments?
What pin configuration and mounting style should designers expect?
Which channel conduction mode does it employ and how does that affect circuit behaviour?
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
