Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1

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PHP798.00

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PHP894.00

(inc. VAT)

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Per Unit
Per Pack*
50 - 50PHP15.96PHP798.00
100 - 450PHP15.481PHP774.05
500 - 950PHP14.552PHP727.60
1000 - 2450PHP13.243PHP662.15
2500 +PHP11.653PHP582.65

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Packaging Options:
RS Stock No.:
110-7170
Mfr. Part No.:
BSS606NH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS 3

Package Type

SOT-89

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.7nC

Maximum Power Dissipation Pd

1W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

4.5mm

Width

2.5 mm

Standards/Approvals

No

Height

1.5mm

Automotive Standard

AEC-Q101

Distrelec Product Id

304-36-979

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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