Infineon OptiMOS 3 Type N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1
- RS Stock No.:
- 110-7170
- Distrelec Article No.:
- 304-36-979
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 50 units)*
PHP1,037.40
(exc. VAT)
PHP1,161.90
(inc. VAT)
FREE delivery for orders over ₱5,000.00
- Plus 50 unit(s) shipping from August 31, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP20.748 | PHP1,037.40 |
| 100 - 450 | PHP20.126 | PHP1,006.30 |
| 500 - 950 | PHP18.918 | PHP945.90 |
| 1000 - 2450 | PHP17.215 | PHP860.75 |
| 2500 + | PHP15.149 | PHP757.45 |
*price indicative
- RS Stock No.:
- 110-7170
- Distrelec Article No.:
- 304-36-979
- Mfr. Part No.:
- BSS606NH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 3 | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.5mm | |
| Height | 1.5mm | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 3 | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.5mm | ||
Height 1.5mm | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 3 Series MOSFET, 60V Maximum Drain Source Voltage, 3.2A Maximum Continuous Drain Current - BSS606NH6327XTSA1
Features and Benefits:
• 90mΩ low RDS(on) reduces conduction losses in power paths
• 3.2A continuous drain current supports moderate load driving
• 1.1V forward voltage minimises voltage drop in diode conduction
• 3.7nC typical gate charge enables efficient switching control
• 20V gate tolerance permits flexible gate-drive voltages
Applications
• Ideal for DC/DC converter switch stages
• Used in motor-control gate driver interfaces
• Can be used for load switching in telematics modules
• Appropriate for power distribution in embedded systems
What package dimensions and form factor does it use?
How does it cope with extreme thermal environments?
What pin configuration and mounting style should designers expect?
Which channel conduction mode does it employ and how does that affect circuit behaviour?
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-89
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223 FDT86106LZ
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
