Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1

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Subtotal (1 pack of 50 units)*

PHP1,453.50

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PHP1,628.00

(inc. VAT)

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Units
Per Unit
Per Pack*
50 - 200PHP29.07PHP1,453.50
250 - 1200PHP28.198PHP1,409.90
1250 - 2450PHP26.506PHP1,325.30
2500 - 6200PHP24.12PHP1,206.00
6250 +PHP21.226PHP1,061.30

*price indicative

Packaging Options:
RS Stock No.:
110-7754
Distrelec Article No.:
304-36-977
Mfr. Part No.:
BSP372NH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

OptiMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.8W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

9.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.5mm

Height

1.6mm

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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