Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

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PHP1,111.50

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PHP1,245.00

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Per Unit
Per Pack*
50 - 50PHP22.23PHP1,111.50
100 - 200PHP21.563PHP1,078.15
250 - 450PHP20.269PHP1,013.45
500 - 950PHP18.445PHP922.25
1000 +PHP16.232PHP811.60

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Packaging Options:
RS Stock No.:
826-9260
Mfr. Part No.:
BSP296NH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.85V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

3.5 mm

Height

1.6mm

Length

6.5mm

Standards/Approvals

No

Distrelec Product Id

304-44-413

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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