Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 2500 units)*

PHP37,240.00

(exc. VAT)

PHP41,710.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 +PHP14.896PHP37,240.00

*price indicative

RS Stock No.:
262-6763
Mfr. Part No.:
IRFL024NTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low on-resistance

Dynamic dv/dt rating

Fasts switching

Fully avalanche rated

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