Infineon HEXFET Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 4-Pin SOT-223

This image is representative of the product range

Subtotal (1 reel of 2500 units)*

PHP39,445.00

(exc. VAT)

PHP44,177.50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
2500 +PHP15.778PHP39,445.00

*price indicative

RS Stock No.:
262-6765
Mfr. Part No.:
IRFL024ZTRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.1A

Maximum Drain Source Voltage Vds

55V

Package Type

SOT-223

Series

HEXFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Repetitive avalanche allowed up to Tjmax

Related links