Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223 IRLL014NTRPBF
- RS Stock No.:
- 830-3307
- Distrelec Article No.:
- 304-44-472
- Mfr. Part No.:
- IRLL014NTRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP812.25
(exc. VAT)
PHP909.75
(inc. VAT)
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In Stock
- Plus 25 unit(s) shipping from August 31, 2026
- Plus 2,175 unit(s) shipping from September 07, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP32.49 | PHP812.25 |
| 50 - 100 | PHP28.706 | PHP717.65 |
| 125 - 225 | PHP28.455 | PHP711.38 |
| 250 - 475 | PHP26.236 | PHP655.90 |
| 500 + | PHP24.266 | PHP606.65 |
*price indicative
- RS Stock No.:
- 830-3307
- Distrelec Article No.:
- 304-44-472
- Mfr. Part No.:
- IRLL014NTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Height | 1.739mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7mm | ||
Height 1.739mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF
This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a VITAL role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a Compact design.
Features & Benefits
• Maximum continuous drain current of 2.8A for dependable performance
• Wide voltage range up to 55V for diverse applications
• Low drain-source on-resistance of 280mΩ minimises power losses
• High thermal stability with a maximum operating temperature of +150°C
• Enhanced gate threshold voltage options to improve switching capabilities
• Designed for surface mount applications, aiding PCB integration
Applications
• Utilised in automation systems for effective motor control
• Employed in power supply circuits for efficient voltage regulation
• Suitable for switching in electronic devices
• Integrated into battery management systems for optimised energy use
• Applicable in LED drivers to enhance control efficiency
What is the recommended mounting technique for optimal performance?
Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.
How should the maximum gate-source voltage be considered when designing circuits?
It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.
Can this component handle high temperatures in operational environments?
It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.
Is it compatible with low-voltage battery systems?
Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.
Related links
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