Infineon HEXFET Type N-Channel MOSFET, 170 A, 80 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 124-9010
- Mfr. Part No.:
- IRFP2907ZPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 25 units)*
PHP5,754.65
(exc. VAT)
PHP6,445.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | PHP230.186 | PHP5,754.65 |
| 50 - 100 | PHP214.09 | PHP5,352.25 |
| 125 - 225 | PHP194.022 | PHP4,850.55 |
| 250 - 475 | PHP177.362 | PHP4,434.05 |
| 500 + | PHP163.347 | PHP4,083.68 |
*price indicative
- RS Stock No.:
- 124-9010
- Mfr. Part No.:
- IRFP2907ZPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 310W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Width | 5.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 310W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Length 15.9mm | ||
Width 5.3 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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