Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF
- RS Stock No.:
- 257-9322
- Mfr. Part No.:
- IRF7854TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP463.50
(exc. VAT)
PHP519.10
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,700 unit(s) shipping from October 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP92.70 | PHP463.50 |
| 50 - 95 | PHP89.92 | PHP449.60 |
| 100 - 495 | PHP84.526 | PHP422.63 |
| 500 - 1995 | PHP76.918 | PHP384.59 |
| 2000 + | PHP67.688 | PHP338.44 |
*price indicative
- RS Stock No.:
- 257-9322
- Mfr. Part No.:
- IRF7854TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon IRF series is the 80V n channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
Related links
- Infineon HEXFET N-Channel MOSFET 80 V, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET 40 V, 8-Pin SO-8 IRF7470TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET -20 V, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET 200 V, 8-Pin SO-8
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin SO-8